Method Of Transferring A Thin Crystalline Semiconductor Layer

A method for transferring a thin semiconductor layer from one substrate to another substrate involves depositing a thin epitaxial monocrystalline semiconductor layer on a substrate having surface contaminants.

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Method Of Transferring A Thin Crystalline Semiconductor Layer

A method for transferring a thin semiconductor layer from one substrate to another substrate involves depositing a thin epitaxial monocrystalline semiconductor layer on a substrate having surface contaminants. An interface that includes the contaminants is formed in between the deposited layer and the substrate. Hydrogen atoms are introduced into the structure and allowed to diffuse to the interface. Afterward, the thin semiconductor layer is bonded to a second substrate and the thin layer is separated away at the interface, which results in transferring the thin epitaxial semiconductor layer from one substrate to the other substrate.

U.S. Patent No.: 7,153,761 (DOE S-104,967)

Patent Application Filing Date: October 3, 2005

Patent Issue Date: December 26, 2006

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